Photoluminescence upconversion atGaAs/InGaP2interfaces driven by a sequential two-photon absorption mechanism-Reference-Cited by-同舟云学术

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Photoluminescence upconversion atGaAs/InGaP2interfaces driven by a sequential two-photon absorption mechanism

Published:2016-06-09 Issue:23 Volume:93 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hylton N. P.,Hinrichsen T. F.,Vaquero-Stainer A. R.,Yoshida M.,Pusch A.,Hopkinson M.,Hess O.,Phillips C. C.,Ekins-Daukes N. J.

Funder

Engineering and Physical Sciences Research Council

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.93.235303/fulltext

Reference39 articles.

1. High‐efficiency energy up‐conversion at GaAs‐GaInP2 interfaces

2. Interface-induced conversion of infrared to visible light at semiconductor interfaces

3. Time-resolved observation of anti-Stokes photoluminescence at ordered Ga0.5In0.5P and GaAs interfaces

4. Carrier localization effects in energy up conversion at ordered (Al0.5Ga0.5)0.5In0.5P/GaAs heterointerface

5. Dynamic process of anti-Stokes photoluminescence at a long-range-orderedGa0.5In0.5P/GaAsheterointerface

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1. Observations of two-dimensional electron gases in AlGaN/GaN high-electron-mobility transistors using up-converted photoluminescence excitation;Optics Express;2024-08-21

2. Periodic lattice microscopic rate equation model for upconversion dynamics and determination of energy transfer microparameters;Physical Review B;2024-07-02

3. Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions;Micro and Nanostructures;2023-05

4. Carbon Nanoparticles as Versatile Auxiliary Components of Perovskite‐Based Optoelectronic Devices;Advanced Functional Materials;2021-02-22

5. Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors;Nature Communications;2017-11-21

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