Excitation intensity dependence of photoluminescence in Ga0.52In0.48P
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103615
Reference17 articles.
1. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
2. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
3. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
4. MOCVD of Ga0.52In0.48P Using Tertiarybutylphosphine
5. Electroreflectance and photoreflectance of GaInP
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