Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100317
Reference15 articles.
1. Long-Range Order inAlxGa1−xAs
2. The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxy
3. Atomic ordering inGa0.47In0.53As andGaxIn1−xAsyP1−yalloy semiconductors
4. Ordering in GaAs1−xSbxgrown by molecular beam epitaxy
5. Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band‐gap energy
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