Passivation of an anodic oxide/p-Si interface stimulated by electron injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1356431
Reference24 articles.
1. Express characterization of indirect semiconductor surfaces by in situ photoluminescence during chemical and electrochemical treatments
2. Is there a limit for the passivation of Si surfaces during anodic oxidation in acidic NH4F solutions?
3. Quantitative analysis of room temperature photoluminescence of c-Si wafers excited by short laser pulses
4. Improvements in the determination of interface state density using deep level transient spectroscopy
5. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
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