Electrochemical Passivation and Modification of c-Si surfaces
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-642-22275-7_4
Reference69 articles.
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3. Angermann, H., Kliefoth, K., Flietner, H.: Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density. Appl. Surf. Sci. 104-105, 107–112 (1996)
4. Rappich, J., Timoshenko, V.Y., Dittrich, T.: In Situ Monitoring of Electrochemical Processes at the (100) p-Si/Aqueous NH4F Electrolyte Interface by Photoluminescence. J. Electrochem. Soc. 144, 493–496 (1997)
5. Timoshenko, V.Y., Petrenko, A.B., Stolyarov, M.N., Dittrich, T., Fuessel, W., Rappich, J.: Quantitative analysis of room temperature photoluminescence of c-Si wafers excited by short laser pulses. J. Appl. Phys. 85, 4171–4175 (1999)
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