Improvements in the determination of interface state density using deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334179
Reference28 articles.
1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
2. MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinel
3. A quasi-static technique for MOS C-V and surface state measurements
4. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
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