Role of hydrogen in Ge∕HfO2∕Al gate stacks subjected to negative bias temperature instability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2827567
Reference15 articles.
1. Interface traps and dangling-bond defects in (100)Ge∕HfO2
2. Ultrathin<tex>$hbox Al_2hbox O_3$</tex>and<tex>$hboxHfO_2$</tex>Gate Dielectrics on Surface-Nitrided Ge
3. Effect of Ge Surface Nitridation on the$hboxGe/HfO_2/hboxAl$MOS Devices
4. Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs
5. Hole energy dependent interface trap generation in MOSFET Si/SiO/sub 2/ interface
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2. Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks;Journal of Materials Science & Technology;2017-08
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4. Evaluating the merit of ALD coating as a barrier against hydrogen degradation in capacitor components;RSC Advances;2015
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