Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing

Published:2014-12-07 Issue:21 Volume:116 Page:214111
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bethge O.¹,Zimmermann C.¹,Lutzer B.¹,Simsek S.¹,Smoliner J.¹,Stöger-Pollach M.²,Henkel C.³,Bertagnolli E.¹^ORCID

Affiliation:

1. Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria

2. USTEM, Vienna University of Technology, Wiedner Hauptstraße 8-10, 10 40 Vienna, Austria

3. Integrated Devices and Circuits, KTH - School of ICT, Valhallavägen 79, Stockholm, Sweden

Funder

Austrian Science Fund (FWF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903533

Reference60 articles.

1. Germanium channel MOSFETs: Opportunities and challenges

2. Ge based high performance nanoscale MOSFETs

3. Atomic Layer Deposition of High-<tex>$kappa$</tex>Dielectric for Germanium MOS Applications—Substrate Surface Preparation

4. Hole Mobilities and Surface Generation Currents of CVD Insulators on Germanium

5. Role of hydrogen in Ge∕HfO2∕Al gate stacks subjected to negative bias temperature instability

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics;Materials Science in Semiconductor Processing;2023-08

2. Electrical Properties of HfO₂ on Si_1–xGe_x Substrates Pretreated Using a Y Precursor with and without Subsequent Oxidant Pulsing;ACS Applied Electronic Materials;2023-02-01

3. Characterization of GeO2 films formed on Ge substrate using high pressure oxidation;Journal of Vacuum Science & Technology B;2021-07

4. Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-04-13

5. Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation;Applied Surface Science;2021-04

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3