In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
2. Department of Physics and Yale-NUS College, National University of Singapore, Singapore 117551
Funder
Singapore National Research Foundation through the Competitive Research Program
the Academic Research Fund
Trailblazer Grant
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4947116
Reference50 articles.
1. Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
2. Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
3. Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation
4. Tensile-Strained GeSn Metal–Oxide–Semiconductor Field-Effect Transistor Devices on Si(111) Using Solid Phase Epitaxy
5. Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting;Journal of Vacuum Science & Technology B;2024-07-01
2. Effects of ion implantation with arsenic and boron in germanium-tin layers;Journal of Vacuum Science & Technology B;2024-04-09
3. Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy;Physical Review Materials;2023-07-17
4. Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices;Japanese Journal of Applied Physics;2023-01-31
5. Monolithic Waveguide Group IV Multiple-Quantum-Well Photodetectors and Modulators on 300-mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit;IEEE Transactions on Electron Devices;2022-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3