Monolithic Waveguide Group IV Multiple-Quantum-Well Photodetectors and Modulators on 300-mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit-Reference-Cited by-同舟云学术

Monolithic Waveguide Group IV Multiple-Quantum-Well Photodetectors and Modulators on 300-mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit

Published:2022-12 Issue:12 Volume:69 Page:7161-7166
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Haibo¹^ORCID,Zhang Jishen¹,Zhang Gong¹^ORCID,Chen Yue¹,Han Kaizhen¹^ORCID,Huang Yi-Chiau²,Gong Xiao¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Queenstown, Singapore

2. Applied Materials Inc., Sunnyvale, CA, USA

Funder

National Research Foundation Singapore, under its Quantum Engineering Programme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09869658.pdf?arnumber=9869658

Reference25 articles.

1. High speed (f3-dB above 10 GHz) photo detection at two-micron-wavelength realized by GeSn/Ge multiple-quantum-well photodiode on a 300 mm Si Substrate;xu;IEDM Tech Dig,2018

2. Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications

3. High-speed silicon modulators for the 2 μm wavelength band

4. First Demonstration of Waveguide-Coupled Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on the SOI Platform for 2-μm Wavelength Optoelectronic Integrated Circuit

5. First Monolithic Integration of Group IV Waveguide Photodetectors and Modulators on 300 mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit

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