Influence of theDXcenter on the capacitance‐voltage characteristics of δ‐doped GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102129
Reference19 articles.
1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs
2. Subband physics for a “realistic” δ-doping layer
3. Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions
4. Effect of substrate temperature on migration of Si in planar‐doped GaAs
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1. Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures;Microelectronics Journal;2008-12
2. Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures;Thin Solid Films;2006-02
3. Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples;Applied Surface Science;2004-05
4. Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures;Applied Surface Science;2001-11
5. Post-annealing-induced free-carrier compensation in shallow-buried δ layers of GaAs(100);Surface Science;1999-01
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