Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures-Reference-Cited by-同舟云学术

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Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures

Published:2008-12 Issue:12 Volume:39 Page:1439-1443
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Srnanek R.,Irmer G.,Donoval D.,Osvald J.,Mc Phail D.,Christoffi A.,Sciana B.,Radziewicz D.,Tlaczala M.

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Delta Doping of Semiconductors,1995

2. Influence of theDXcenter on the capacitance‐voltage characteristics of δ‐doped GaAs

3. Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinement

4. Theoretical and experimental studies of the broadening of dilute delta-doped Si spikes in GaAs during SIMS depth profiling

5. Magnetotransport and electronic subband studies of Si delta-doped In0.1Ga0.9As/GaAs strained single quantum wells

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge;Journal of Raman Spectroscopy;2014-01-16

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