A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge-Reference-Cited by-同舟云学术

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A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge

Published:2014-01-16 Issue:2 Volume:45 Page:197-201
ISSN:0377-0486
Container-title:Journal of Raman Spectroscopy
language:en
Short-container-title:J. Raman Spectrosc.

Author:

Sanson A.¹,Napolitani E.¹,Carnera A.¹,Impellizzeri G.²,Giarola M.³,Mariotto G.³

Affiliation:

1. CNR-IMM MATIS and Dipartimento di Fisica e Astronomia ‘G. Galilei’; Universitμa di Padova; Via Marzolo 8 I-35131 Padova Italy

2. CNR-IMM MATIS at Dipartimento di Fisica e Astronomia; Universitμa di Catania; Via S. So¯a 64 I-95123 Catania Italy

3. Dipartimento di Informatica; Universitμa di Verona; Strada le Grazie 15 I-37134 Verona Italy

Publisher

Wiley

Subject

Spectroscopy,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jrs.4440/fullpdf

Reference23 articles.

1. Spreading resistance roadmap towards and beyond the 70 nm technology node

2. Micro-Raman spectroscopy for characterization of semiconductor devices

3. Temperature distribution in Si-MOSFETs studied by micro-Raman spectroscopy

4. Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry;ACS Applied Electronic Materials;2019-11-11

2. Using Visible Laser-Based Raman Spectroscopy to Identify the Surface Polarity of Silicon Carbide;The Journal of Physical Chemistry C;2016-08-09

3. Recent advances in linear and non-linear Raman spectroscopy. Part IX;Journal of Raman Spectroscopy;2015-12

4. Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry;Journal of Applied Physics;2015-02-21

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