Using Visible Laser-Based Raman Spectroscopy to Identify the Surface Polarity of Silicon Carbide-Reference-Cited by-同舟云学术

Using Visible Laser-Based Raman Spectroscopy to Identify the Surface Polarity of Silicon Carbide

Published:2016-08-09 Issue:32 Volume:120 Page:18228-18234
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tseng Yi-Chuan¹,Cheng Yu-Chia¹,Lee Yang-Chun¹,Ma Dai-Liang²,Yu Bang-Ying²,Lin Bo-Cheng²,Chen Hsuen-Li¹

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan

2. Materials and Electro-Optics Research Division, National Chung-Shan Institute of Science and Technology, P.O. Box 90008-8-1, Lungtan, Taoyuan 32599, Taiwan

Funder

Ministry of Science and Technology, Taiwan

National Chung-Shan Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b03713

Reference32 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. 6H-Silicon Carbide Light Emitting Diodes and UV Photodiodes

3. Advances in silicon carbide science and technology at the micro- and nanoscales

4. Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

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