Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry-Reference-Cited by-同舟云学术

Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry

Published:2019-11-11 Issue:12 Volume:1 Page:2646-2654
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Clavel Michael B.¹^ORCID,Greene-Diniz Gabriel²,Grüning Myrta²³,Henry Karen T.⁴,Kuhn Markus⁴,Bodnar Robert J.⁵,Hudait Mantu K.¹^ORCID

Affiliation:

1. Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States

2. School of Mathematics and Physics, Queen’s University Belfast, Belfast BT7 1NN, Northern Ireland, United Kingdom

3. European Theoretical Spectroscopy Facility (ETSF), B-4000 Liège, Belgium

4. Intel Corporation, Hillsboro, Oregon 97124, United States

5. Fluids Research Laboratory, Department of Geosciences, Virginia Tech, Blacksburg, Virginia 24061, United States

Funder

Division of Electrical, Communications and Cyber Systems

Department for the Economy of Northern Ireland

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

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