Solid solubility limited dopant activation of group III dopants (B, Ga & In) in Ge targeting sub-7nm node low p+ contact resistance-Reference-Cited by-同舟云学术

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Solid solubility limited dopant activation of group III dopants (B, Ga & In) in Ge targeting sub-7nm node low p+ contact resistance

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 17th International Workshop on Junction Technology (IWJT)
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Author:

Borland John,Lee Yao-Jen,Chuang Shang-Shiun,Tseng Tseung-Yuen,Liu Chee-Wee,Huet Karim,Goodman Gary,Marino John

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7958784/7966496/07966526.pdf?arnumber=7966526

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of the Si Content on the Electrical Properties of NiSi x Ge1–x Source/Drain Contact Metal for Ge pMOSFETs;IEEE Transactions on Electron Devices;2021-11

2. Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs(001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry;ACS Applied Electronic Materials;2019-11-11

3. Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes;IEEE Transactions on Electron Devices;2018-04

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