Transformation kinetics of an intrinsic bistable defect in damaged silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3678581
Reference13 articles.
1. Defect-driven gain bistability in neutron damaged, silicon bipolar transistors
2. A bistable divacancylike defect in silicon damage cascades
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3. Metastable acceptors in boron doped silicon: evidence of the defects contributing to carrier induced degradation;Journal of Physics D: Applied Physics;2021-04-20
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