Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon-Reference-Cited by-同舟云学术

Formation of a Bistable Interstitial Complex in Irradiated p‐Type Silicon

Published:2019-07-17 Issue:17 Volume:216 Page:1900354
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Makarenko Leonid F.¹^ORCID,Lastovski Stanislav B.²,Yakushevich Hanna S.²,Gaubas Eugenijus³,Pavlov Jevgenij³,Kozlovski Vitali V.⁴,Moll Michael⁵,Pintilie Ioana⁶

Affiliation:

1. Department of Applied Mathematics and Computer ScienceBelarusian State University Independence Ave. 4 220030 Minsk Belarus

2. Laboratory of Radiation EffectsScientific-Practical Materials Research Centre of NAS of Belarus P. Browka Str. 17 220072 Minsk Belarus

3. Institute of Photonics and NanotechnologyVilnius University Sauletekio Av. 3 LT-10257 Vilnius Lithuania

4. Department of Experimental PhysicsPeter the Great St. Petersburg State Polytechnic University 195251 St. Petersburg Russia

5. EP DepartmentCERN CH-1211 Geneva 23 Switzerland

6. Department of Multifunctional Materials and StructuresNational Institute of Materials Physics Atomistilor Str. 405A Bucharest-Magurele 077125 Romania

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900354

Reference34 articles.

1. Introduction to defect bistability

2. Metastable defect structures in elemental and compound semiconductors

3. Defect-driven gain bistability in neutron damaged, silicon bipolar transistors

4. Electronic and dynamical properties of the silicon trivacancy

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