Charge effect on the irradiation damage of silicon: Insights from phase-field simulation-Reference-Cited by-同舟云学术

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Charge effect on the irradiation damage of silicon: Insights from phase-field simulation

Published:2020-09 Issue: Volume:24 Page:101187
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Wang Yuanyuan,Gao Yinlu,Jiang Xue,Zhao Jijun

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Science Challenge Project

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference16 articles.

1. Transformation kinetics of an intrinsic bistable defect in damaged silicon

2. Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

3. Disordering and defect production in silicon by keV ion irradiation studied by molecular dynamics

4. A computational framework for automation of point defect calculations

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