Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures-Reference-Cited by-同舟云学术

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Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures

Published:2009-12 Issue:23-24 Volume:404 Page:4561-4564
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Makarenko L.F.,Lastovski S.B.,Korshunov F.P.,Murin L.I.,Moll M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Silicon Divacancy and its Direct Production by Electron Irradiation

2. Intrinsic defects in silicon

3. Self-interstitial related reactions in silicon irradiated by light ions

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations;Sensors;2023-06-19

2. Bistability of the BiOi complex and its implications on evaluating the “acceptor removal” process in p-type silicon;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-11

3. Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles;Physica B: Condensed Matter;2012-08

4. Annealing mechanisms of self-interstitial related defect E1=Ec−0.39eV in irradiated silicon;Physica B: Condensed Matter;2012-07

5. Transformation kinetics of an intrinsic bistable defect in damaged silicon;Journal of Applied Physics;2012-01-15

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