Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles-Reference-Cited by-同舟云学术

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Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles

Published:2012-08 Issue:15 Volume:407 Page:3016-3019
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Makarenko L.F.,Moll M.,Evans-Freeman J.H.,Lastovski S.B.,Murin L.I.,Korshunov F.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Point defects and dopant diffusion in silicon

2. Intrinsic defects in silicon

3. The vacancy in silicon: Identical diffusion properties at cryogenic and elevated temperatures

4. Barrier to Migration of the Silicon Self-Interstitial

5. The self-interstitial in silicon and germanium

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n + –p Diodes upon Irradiation with Alpha Particles;physica status solidi (a);2021-05-05

2. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen;Journal of Applied Physics;2018-04-28

3. Formation kinetics of trivacancy-oxygen pairs in silicon;Journal of Applied Physics;2014-09-28

4. Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+ -p diodes;physica status solidi (a);2014-07-16

5. Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+–p structures;AIP Conference Proceedings;2014

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