Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+ -p diodes-Reference-Cited by-同舟云学术

Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n+ -p diodes

Published:2014-07-16 Issue:11 Volume:211 Page:2558-2562
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Makarenko L. F.¹,Lastovskii S. B.²,Yakushevich H. S.²,Moll M.³,Pintilie I.⁴

Affiliation:

1. Belarusian State University; Independence Ave. 4 220030 Minsk Belarus

2. Scientific-Practical Materials Research Centre of NAS of Belarus; P. Brovka Str. 19 220072 Minsk Belarus

3. CERN; 1211 Geneva 23 Switzerland

4. National Institute of Materials Physics; Str. Atomistilor 105bis Magurele Romania

Funder

Romanian Academy of Sciences

Romanian Authority for Scientific Research

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431315/fullpdf

Reference23 articles.

1. Recombination enhanced defect reactions

2. Recombination-Enhanced Reactions in Semiconductors

3. Recombination-enhanced migration of interstitial aluminum in silicon

4. Interstitial boron in silicon: A negative-Usystem

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