Epitaxial growth ofn+‐nGaAs metal‐semiconductor field‐effect transistor structures using tertiarybutylarsine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102791
Reference13 articles.
1. Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs
2. Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic
3. Growth of high‐quality GaAs using trimethylgallium and diethylarsine
4. Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic
5. Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films;Journal of Electronic Materials;1997-01
2. High purity GaAs and AlGaAs grown using tertiarybutylarsine, trimethylaluminum, and trimethylgallium;Journal of Crystal Growth;1996-06
3. Si-doping in GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tetraethylsilane;Journal of Crystal Growth;1994-12
4. Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source;Journal of Crystal Growth;1994-02
5. Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPE;Journal of Electronic Materials;1992-03
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