Si-doping in GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tetraethylsilane
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Use of tertiarybutylarsine for GaAs growth
2. Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs
3. GaAsp‐i‐nphotodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
4. MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor
5. Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsine
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1. Magnetophotoluminescence study of theGa0.5In0.5P/GaAsheterointerface with a ordering-induced two-dimensional electron gas;Physical Review B;2002-11-18
2. Two-dimensional electron gas at Ga0.5In0.5P/GaAs heterointerface spontaneously induced by atomic ordering;Physica E: Low-dimensional Systems and Nanostructures;2002-03
3. GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors;Solar Energy Materials and Solar Cells;2001-02
4. Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane;Journal of Crystal Growth;1998-12
5. Doping characteristics of n-type InP using phenylsilane and TBP by MOVPE;Journal of Crystal Growth;1998-12
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