GaAsp‐i‐nphotodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101973
Reference9 articles.
1. Growth of high‐quality GaAs using trimethylgallium and diethylarsine
2. The use of organic As precursors in the low pressure MOCVD of GaAs
3. Use of tertiarybutylarsine for GaAs growth
4. Metalorganic chemical vapor deposition of high‐purity GaAs using tertiarybutylarsine
5. High‐speed GaAlAs/GaAsp‐i‐nphotodiode on a semi‐insulating GaAs substrate
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1. Mid-infrared emissive InAsSb quantum dots grown by metal–organic chemical vapor deposition;CrystEngComm;2013
2. Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions;Journal of Nanoparticle Research;2006-09-23
3. Effects of growth conditions on InAs quantum dot formation by metal-organic chemical vapor deposition using tertiarybutylarsine in pure N2 ambient;Journal of Applied Physics;2006-06-15
4. Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane;Journal of Crystal Growth;1998-12
5. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films;Journal of Electronic Materials;1997-01
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