Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference42 articles.
1. In situ mass spectroscopy studies of the decomposition of organometallic arsenic compounds in the presence of Ga(CH3)3 and Ga(C2H5)3
2. Mechanisms of GaAs growth using tertiarybutylarsine and trimethylgallium
3. The effect of supplemental t-butyl radicals on the pyrolysis of tertiarybutylarsine, tertiarybutylphosphine, and ditertiarybutylarsine
4. Comparative pyrolysis studies of ethylarsines
5. The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine
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1. Si-doping into GaAs grown by metalorganic vapor phase epitaxy using bisdiisopropylaminosilane;Journal of Crystal Growth;1998-12
2. Simulation and analysis of the capacitance–voltage characteristics of the δ-doped semiconductors;Materials Chemistry and Physics;1997-10
3. Recent progress in δ-doping of III–V semiconductors grown by metal organic vapour phase epitaxy;Solid-State Electronics;1997-09
4. Achievement of a very high electron density in Si δ-doped GaAs grown by metal organic vapour phase epitaxy at 630°C;Journal of Crystal Growth;1997-08
5. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films;Journal of Electronic Materials;1997-01
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