Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon-Reference-Cited by-同舟云学术

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

Published:2006-03 Issue:5 Volume:99 Page:054902
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dueñas S.,Castán H.,García H.,de Castro A.,Bailón L.,Kukli K.,Aidla A.,Aarik J.,Mändar H.,Uustare T.,Lu J.,Hårsta A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2177383

Reference28 articles.

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