Deep traps and photo-electric properties of p-Si/MgO/n-Zn1−xMgxO heterojunction
Author:
Affiliation:
1. Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
2. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
Funder
Narodowe Centrum Nauki (National Science Centre)
Politechnika Wroclawska (Wroclaw University of Technology)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4928728
Reference36 articles.
1. Work function, electron affinity and band bending of zinc oxide surfaces
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5. Oxygen Band in Magnesium Oxide
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