The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD-Reference-Cited by-同舟云学术

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The work function of n-ZnO deduced from heterojunctions with Si prepared by ALD

Published:2012-07-17 Issue:31 Volume:45 Page:315101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Quemener V,Alnes M,Vines L,Rauwel P,Nilsen O,Fjellvåg H,Monakhov E V,Svensson B G

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

2. Atomic layer deposition of ZnO transparent conducting oxides

3. ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor

4. Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

5. Organic solar cells on indium tin oxide and aluminum doped zinc oxide anodes

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