Blocking Si‐Induced Visible Photoresponse in n ‐Mg x Zn 1– x O/p‐Si Heterojunction UV Photodetectors Using MgO Barrier Layer-Reference-Cited by-同舟云学术

Blocking Si‐Induced Visible Photoresponse in n ‐Mg _x Zn _{1–
x} O/p‐Si Heterojunction UV Photodetectors Using MgO Barrier Layer

Published:2022-09-23 Issue:22 Volume:219 Page:2200285
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Chetia Shantanu K.¹²^ORCID,Das Amit K.¹,Ajimsha Rohini S.¹,Banik Soma²³,Singh Rashmi⁴,Padhi Partha S.¹²,Sharma Tarun K.²⁵,Misra Pankaj¹²

Affiliation:

1. Oxide Nano-Electronics Laboratory Laser Materials Processing Division Raja Ramanna Centre for Advanced Technology Indore 452013 India

2. Homi Bhabha National Institute Training School Complex Anushakti Nagar Mumbai 400085 India

3. Accelerator Physics and Synchrotrons Utilization Division Raja Ramanna Centre for Advanced Technology Indore 452013 India

4. Laser and Functional Materials Division Raja Ramanna Centre for Advanced Technology Indore 452013 India

5. Materials Science Section Raja Ramanna Centre for Advanced Technology Indore 452013 India

Funder

Department of Atomic Energy, Government of India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200285

Reference24 articles.

1. Structural phase transitions and fundamental band gaps ofMgxZn1−xOalloys from first principles

2. Recent progress of ZnMgO ultraviolet photodetector

3. Realization of cubic ZnMgO photodetectors for UVB applications

4. MgxZn1−xO as a II–VI widegap semiconductor alloy

5. Instability of UV Photoresponse in MgZnO Thin Films and Its Improvement by MgO Capping

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