Enhanced grain growth of phosphorus‐doped polycrystalline silicon by titanium silicide formation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97331
Reference14 articles.
1. Grain‐Growth Mechanisms in Polysilicon
2. Compensation of grain growth enhancement in doped silicon films
3. Cross‐sectional transmission electron microscopy investigation of Ti/Si reaction on phosphorus‐doped polycrystalline silicon gate
4. Interaction of TiSi2layers with polycrystalline Si
5. Implanted noble gas atoms as diffusion markers in silicide formation
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4. Variation in emitter diffusion depth by TiSi/sub 2/ formation on polysilicon emitters of Si bipolar transistors;IEEE Transactions on Electron Devices;2001
5. Dopant Diffusion and Segregation;Polycrystalline Silicon for Integrated Circuits and Displays;1998
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