Variation in emitter diffusion depth by TiSi/sub 2/ formation on polysilicon emitters of Si bipolar transistors
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Published:2001
Issue:9
Volume:48
Page:2108-2117
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ISSN:0018-9383
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Container-title:IEEE Transactions on Electron Devices
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language:
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Short-container-title:IEEE Trans. Electron Devices
Author:
Kondo M.,Shimamoto H.,Washio K.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. Process Integration;High-Frequency Bipolar Transistors;2003