Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical vapor deposition

Published:2004-08 Issue:3 Volume:96 Page:1719-1729
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Durand C.,Dubourdieu C.,Vallée C.,Loup V.,Bonvalot M.,Joubert O.,Roussel H.,Renault O.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1766412

Reference54 articles.

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2. Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films

3. A capacitorless double-gate DRAM cell

4. High-density MIM capacitors using Al2O3 and AlTiOx dielectrics

5. Metal–insulator–metal capacitors using Y[sub 2]O[sub 3] dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition

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