Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition
Author:
Affiliation:
1. Department of Physics, Duke University, Durham, NC, 27708 USA
2. Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 USA
3. CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari, Italy
Funder
National Science Foundation (NSF)
Office of Naval Research (ONR)
Division of Electrical, Communications and Cyber Systems (ECCS)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4944502
Reference24 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
3. Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
4. Measurement of valence-band offsets of InAlN/GaN heterostructures grown by metal-organic vapor phase epitaxy
5. Surface electronic properties of undoped InAlN alloys
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