Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy

Published:1999-09-15 Issue:Part 2, No. 9A/B Volume:38 Page:L984-L986
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kariya Michihiko,Nitta Shugo,Yamaguchi Shigeo,Amano Hiroshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-12

2. Mg Doping of N-Polar, In-Rich InAlN;Materials;2023-03-10

3. Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire;Materials Science in Semiconductor Processing;2023-03

4. AlN/GaN and InAlN/GaN DBRs;Advances in Imaging and Electron Physics;2019

5. The characteristics of MBE-grown InxAl1−xN/GaN surface states;Applied Physics Letters;2016-08-22

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