Correlation between Ti source/drain contact and performance of InGaZnO-based thin film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4790357
Reference20 articles.
1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
4. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
5. Antireflective ZnSnO/Ag bilayer-based transparent source and drain electrodes for transparent thin film transistors
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