Affiliation:
1. Faculty of Physics Nizhny Novgorod 603950 Russia
2. Department for technology of nanostructures and devices Institute of Physics for Microstructures RAS Afonino 603087 Russia
Abstract
The conditions for the growth of polycrystalline GeSn films on SiO2/Si(001) substrates by hot wire chemical vapor deposition are determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure, and transport properties of films is studied. GeSn films obtained at 300 °C have a uniform surface with a roughness of less than 1.0 nm. It is shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm2 V−1 × s−1. despite the small grain size of 35 nm. Such films are of great interest for creating thin‐film transistors for active matrices’ liquid crystal displays.
Funder
Russian Science Foundation