1. J. Kelly, J. H.C. Chen, H. Huang, C. K. Hu, E. Liniger, R. Patlolla, B. Peethala, P. Adusumilli, H. Shobha, T. Nogami, T. Spooner, E. Huang, D. Edelstein, D. Canaperi, V. Kamineni, F. Mont, and S. Siddiqui, in 2016 IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IEEE, 2016), pp. 40–42.
2. J. S. Chawla, S. H. Sung, S. A. Bojarski, C. T. Carver, M. Chandhok, R. V. Chebiam, J. S. Clarke, M. Harmes, C. J. Jezewski, M. J. Kobrinski, B. J. Krist, M. Mayeh, R. Turkot, and H. J. Yoo, in 2016 IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IEEE, 2016), pp. 63–65.
3. Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study
4. D. Gall, in 2018 IEEE International Interconnect Technology Conference (IEEE, 2018), pp. 157–159.
5. Resistivity size effect in epitaxial Ru(0001) layers