Resistivity size effect in epitaxial Ru(0001) layers-Reference-Cited by-同舟云学术

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Resistivity size effect in epitaxial Ru(0001) layers

Published:2018-10-28 Issue:16 Volume:124 Page:165105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Milosevic Erik¹,Kerdsongpanya Sit¹,Zangiabadi Amirali²,Barmak Katayun²^ORCID,Coffey Kevin R.³,Gall Daniel¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

2. Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA

3. Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32816, USA

Funder

National Science Foundation

Semiconductor Research Corporation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5046430

Reference79 articles.

1. Alteration of Cu conductivity in the size effect regime

2. Epitaxial TiN(001) wetting layer for growth of thin single-crystal Cu(001)

3. Specular electron scattering at single-crystal Cu(001) surfaces

4. Ni doping on Cu surfaces: Reduced copper resistivity

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