Tl incorporation in InSb and lattice contraction of In1−xTlxSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125765
Reference9 articles.
1. Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
2. InTlSb: An infrared detector material?
3. Growth of In1−xTlxSb, a new infrared material, by low‐pressure metalorganic chemical vapor deposition
4. Photoconductance measurements on InTlSb/InSb/GaAs grown by low‐pressure metalorganic chemical vapor deposition
5. Thallium incorporation in molecular‐beam‐epitaxial InSb
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