Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100594
Reference25 articles.
1. OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYS
2. InAsSb strained-layer superlattices for long wavelength detector applications
3. Solid Solution in AIIIBVCompounds
4. p‐njunction formation in InSb and InAs1−xSbxby metalorganic chemical vapor deposition
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