Structural and Optical Characteristics of Metamorphic Bulk InAsSb-Reference-Cited by-同舟云学术

Structural and Optical Characteristics of Metamorphic Bulk InAsSb

Published:2014-09 Issue:03n04 Volume:23 Page:1450021
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Lin Youxi¹,Wang Ding¹,Donetsky Dmitry¹,Kipshidze Gela¹,Shterengas Leon¹,Belenky Gregory¹,Sarney Wendy L.²,Svensson Stefan P.²

Affiliation:

1. Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, NY, 11794, USA

2. US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783, USA

Abstract

Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% and layer thicknesses up to 3 μm were grown by molecular beam epitaxy. The photoluminescence (PL) peak energy as low as 0.10 eV was demonstrated at T = 77 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures from T = 80 to 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156414500219

Reference26 articles.

1. InAsSb strained-layer superlattices for long wavelength detector applications

2. Growth of InAs1−xSbx(0

3. Long‐wavelength photoluminescence of InAs1−xSbx(0

4. Long wavelength (3–5 and 8–12 μm) photoluminescence of InAs1−xSbxgrown on (100) GaAs by molecular‐beam epitaxy

5. Transport properties of InAsxSb1−x(0≤x≤0.55) on InP grown by molecular‐beam epitaxy