Photoconductance measurements on InTlSb/InSb/GaAs grown by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111129
Reference9 articles.
1. Backside‐illuminated InAsSb/GaSb broadband detectors
2. p‐njunction formation in InSb and InAs1−xSbxby metalorganic chemical vapor deposition
3. Photoconductance measurements on InAs0.22Sb0.78/GaAs grown using molecular beam epitaxy
4. Extended infrared response of InAsSb strained‐layer superlattices
5. InTlSb: An infrared detector material?
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