Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts ton‐AlxGa1−xAs (0≤x≤0.3)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100872
Reference17 articles.
1. Metallurgical interactions at metallization-compound semiconductor interfaces
2. Contact resistances of AuGeNi, AuZn and Al to III–V compounds
3. Electron microscopy study of the AuGe/Ni/Au contacts on GaAs and GaAlAs
4. Extremely low contact resistances for AlGaAs/GaAs modulation‐doped field‐effect transistor structures
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1. Progress in electronic materials characterization;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-09
2. Comparison of Pd/Ge/Pd/Ti/Au and Pd/Ge/Ti/Pt ohmic contacts to n-type InGaAs;Materials Letters;2003-08
3. Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors;Applied Surface Science;1997-06
4. Single-particle and transport relaxation times in back-gated undoped AlGaAs/GaAs;Semiconductor Science and Technology;1996-08-01
5. Shallow Si/Pd‐based ohmic contacts ton‐Al0.5In0.5P;Journal of Applied Physics;1996-04
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