Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors-Reference-Cited by-同舟云学术

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Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

Published:1997-06 Issue: Volume:117-118 Page:362-372
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Holloway P.H.,Kim T.-J.,Trexler J.T.,Miller S.,Fijol J.J.,Lampert W.V.,Haas T.W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference60 articles.

1. Graded band gap ohmic contact top‐ZnSe

2. Recent developments in the MBE growth of wide bandgap II – VI semiconductors for laser diodes and LEDs

3. Graded band gap ohmic contact top‐ZnSe

4. Blue‐green laser diodes

5. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

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