Extremely low contact resistances for AlGaAs/GaAs modulation‐doped field‐effect transistor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334330
Reference6 articles.
1. Ohmic contacts to GaAs
2. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
3. Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures
4. Models for contacts to planar devices
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1. N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs;Semiconductor Science and Technology;2016-04-28
2. Magnetic evidence for solid-state solubility-limited dissolution of Ni into AuGe in alloyed AuGe/Ni/Au Ohmic contacts to GaAs;Journal of Applied Physics;2012-08-15
3. Nickel dissolution into AuGe in alloyed AuGe/Ni/Au Ohmic contacts on GaAs/AlGaAs multilayer structures;Thin Solid Films;2010-07
4. Dependence of melting, roughness and contact resistances on Ge and Ni content in alloyed AuGe/Ni/Au-type electrical contacts to GaAs/AlGaAs multilayer structures;Semiconductor Science and Technology;2010-01-29
5. High temperature alloyed Ag based ohmic contacts to pseudomorphic high electron mobility transistor (p-HEMT);2008 International Conference on Recent Advances in Microwave Theory and Applications;2008-11
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