Metallurgical interactions at metallization-compound semiconductor interfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Effect of alloying behavior on the electrical characteristics of n‐GaAs Schottky diodes metallized with W, Au, and Pt
2. Improved ohmic contacts to n-type GaP devices
3. Ternary Condensed Phase Systems of Gallium and Arsenic with Group lB Elements
4. Gallium Migration Through Contact Metallizations on GaP
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1. Fabrication of low-resistance Sn ohmic contacts on n-type InxGa1-xAsyP1-y for optoelectronic devices;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
2. METALLURGY OF OHMIC CONTACTS TO INP;CAN METALL QUART;1995
3. Metallurgy of Ohmic Contacts to InP;Canadian Metallurgical Quarterly;1995-04
4. Formation and characterization of ohmic contacts to n–AlGaAs using Pd/AuGe/Ag/Au;Journal of Materials Research;1993-05
5. EY-EXAFS and Mössbauer spectroscopy of the Au/Si interface;Physica B: Condensed Matter;1989-06
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