Author:
Zheng L.R.,Lawrence D.J.,Blanton T.N.
Abstract
Sequential deposition of Pd/AuGe/Ag/Au and rapid thermal annealing at 450 to 550 °C were employed to form a shallow ohmic contact to n–Alx Ga1−x As. Contact resistivity was in the range of (0.7–1) × 10−5 at x = 0.3 to (2–4) × 10−5 ohm-cm2 at x = 0.55. Limited interfacial reaction was verified by ion backscattering and x-ray diffraction techniques and attributed to the stability of Au–Ag solid solutions against underlying substrates. Contacts form at 450 to 500 °C, possibly via solid-state reaction, whereas liquid phase reaction may take place at 550 °C.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
4 articles.
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