Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120169
Reference12 articles.
1. A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications
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3. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
4. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy
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1. Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation;Applied Surface Science;2018-09
2. A TEM nanoanalytical investigation of Pd/Ge ohmic contacts for the miniaturization and optimization of n-InGaAs MOSFET devices;Journal of Physics: Conference Series;2010-07-01
3. Mechanisms of current flow in metal-semiconductor ohmic contacts;Semiconductors;2007-11
4. Study of the fabrication of PHEMTs for a 0.1 μm scale Γ-gate using electron beam lithography: structure, fabrication, and characteristics;Microelectronic Engineering;2002-09
5. AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact;Japanese Journal of Applied Physics;2001-03-15
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