Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation-Reference-Cited by-同舟云学术

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Effective Schottky barrier height lowering technique for InGaAs contact scheme: DMIGS and Dit reduction and interfacial dipole formation

Published:2018-09 Issue: Volume:453 Page:48-55
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kim Seung-Hwan,Kim Gwang-Sik,Kim Sun-Woo,Yu Hyun-Yong

Funder

Ministry of Trade, Industry and Energy, Korea

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference46 articles.

1. High performance inverted In0.53Ga0.47As MOSHEMTs on A GaAs substrate with regrown source/drain by MOCVD;Li;IEEE Electron Device Lett.,2012

2. Electron mobility in surface- and buried-channel flatband In0.53Ga0.47As MOSFETs with ALD Al2O3 gate dielectric;Bentley;IEEE Electron Device Lett.,2011

3. Optimization of ohmic metal contacts for advanced GaAs-based CMOS device;Chang;J. Vac. Sci. Technol., B,2012

4. Experimental demonstration of In0.53Ga0.47As field effect transistors with scalable nonalloyed source/drain contacts;Hu;Appl. Phys. Lett.,2011

5. Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate;Datta;IEEE Electron Device Lett.,2007

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure;Journal of Alloys and Compounds;2023-03

2. Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene Oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure;SSRN Electronic Journal;2022

3. Modulating the band alignment and current conduction mechanism of ZrO2/In0.2 Ga0.8As gate stack by atomic-layer-deposited ZnO passivation layer;Thin Solid Films;2020-11

4. Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact;ACS Applied Materials & Interfaces;2019-08-20

5. High Performance Thin Film Transistors With Sputtered In–Al–Zn–O Channel and Different Source/Drain Electrodes;IEEE Electron Device Letters;2019-02

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